本公司专业生产代理销售各类进口及品牌电器: ABB,施耐德，LG, 西门子，欧姆龙，三菱，富士，金钟穆勒,士林，台安,菲尼克斯,常熟开关，上海华通，上海人民电器厂，光洋编码，上海精益,TCL,天水二一三,上海二工，江阴长江、正泰，德力西，天正，中国人民，长城，环宇，华通，宝光，大江控股，欣灵电气、等知名品牌，以及--柳市特价电器、OEM 贴牌加工等， 公司始终坚持诚信为本、服务至上的原则而长立足于“中国电器之都”乐清市柳市镇，我们热，诚欢迎各界宾朋莅临指导！
图片展示的是额定电流20A,他安数尺寸功能一模一样,只是电流不同而已,就不一一上传了!
精优电气产品优势简介：保证产品质量,以多品种经营特色和薄利多销的原则,赢得了广大客户的信任。主营产品： 小型断路器系列 交流接触器系列 万能式断路器系列 塑壳断路器系列 低压电器全系列 双电源系列 仪器仪表系列 建筑电器系列 高压电器系列 KBO控制与保护系列刀开关系列 按钮指示灯系列 电力金具系列 变频器、软启动系列 电机保护器系列 电流互感器系列 变压器系列 户内户外高压真空断路器系列 火灾监控系列 继电器系列 批发的价格，真正做到薄利多销让利给客户。
特价供应塑壳断路器（MCCB）-NF系列：
NF30-CS型号 额定电流（A）
NF30-CS 3.510.15.20.30 、NF63-CW 3.4.6.10.16.20.25.32.40.50.63.
NF125-CW 50.63.80.100.125 、NF250-CW 125.150.175.200.225.250
NF400-CW 250.300.350.400 、NF630-CW 500.600.360、 NF800-CEW 400-800可调
特价供应塑壳断路器标准型
NF32-SW 3.4.6.10.16.20.25.32
NF160-SW 125.150.160、 NF160-SGW RT 125-160可调 、NF160-SGW RE 80-160可调
NF250-SGW RE 125-250可调、 NF400-SW 250.300.350.400、 NF400-SEW 200-400可调
NF630-SW 500.600.630、 NF630-SEW 300-630可调 、NF800-SEW 400-800可调
NF100-SEW 500-1000可调、 NF1250-SEW 600-1250可调 、NF1600-SEW 800-1600可调
NF250-SW 125.150.175.200.225.250、 NF250-SGW RT 125-160.160-250可调
NF63-SW 3.4.6.10.1620.25.32.40.50.63 、NF125-SW 16.20.32.40.50.63.80.100.125
NF125-SGW RT 16-25.25-40.40-63.63-100.80-125可调、 NF125-SGW RE 16-32.32-63.63-100.75-125可调
特价供应塑壳断路器高性能型
NF63-HW 10.16.20.25.32.40.50.63 、NF125-HW 16.20.32.40.50.63.80.100
NF160-HW 125.150.160 NF160-HGW RT 125-160可调、 NF160-HGW RE 80-160可调
NF250-HW 125.150.175.200.225.250 、NF250-HGW RT 125-160.160-250可调 、NF250-HGW RE 125-250可调
NF400-HEW 200-400可调 、NF630-HEW 300-630可调 、NF800-HEW 400-800可调
NF125-HGW RT 16-25.25-40.40-63.63-100.80-125可调、 NF125-HGW RE 16-32.32-63.63-100.75-125可调.
塑壳断路器也被称为装置式断路器，所有的零件都密封于塑料外壳中，辅助触点，欠电压脱扣器以及分励脱扣器等多采用模块化。由于结构非常紧凑，塑壳断路器基本无法检修。其多采德力西塑壳断路器用手动操作，大容量可选择电动分合。由于电子式过电流脱扣器的应用，塑壳断路器也可分为A类和B类两种，B类具有良好的三段保护特性，但由于价格因素，采用热磁式脱扣器的A类产品的市场占有率更高。 塑壳断路器是将触头、灭弧室、脱扣器和操作机构等都装在一个塑料外壳内，一般不考虑维修，适用于作支路的保护开关，过电流脱扣器有热磁式和电子式两种，一般热磁式塑壳断路器为非选择性断路器，仅有过载长延时及短路瞬时两种保护方式，电子式塑壳断路器有过载长延时、短路短延时、短路瞬时和接地故障四种保护功能。部分电子式塑壳断路器新推出的产品还带有区域选择性连锁功能。大多数塑壳断路器为手动操作，也有部分带电动机操作机构。
售前售后服务：
各大知名品牌低压电气产品，包括断路器、接触器、继电器等。为保证顾客的售后体验与长期合作共赢，本公司出售的所有商品均有售后保障，一星期无理由包退，2个月有故障包换，2年内有故障保修。除此之外，凡在本公司购买过产品的用户，我们一律提供技术服务与支持，若有技术性问题，我们会有专业的技术工程师为你解答。精优电气，真诚期待与您的合作！
供应三菱断路器NF125-CW三菱机电英文概述：Tokyo, October 27, 2009 ? Mitsubishi Electric Corporation (TYO: 6503) announced today it has developeda 12.1-inch XGA color TFT-LCD module that is approximately 10% smaller in size with a reduced framewidth compared to its previous model. The new AA121XL01 offers super high brightness (up to 1,000cd/m2) and longer backlight life thanks towhite light emitting diodes (LED), and is inverter-less. Theseimprovements are expected to help reduce size and weight of portable data terminals and other displaymonitors for POS systems which incorporate the new model.The product will be available beginning February 1, 2010 through Mitsubishi Electric’s sales sitesin Japan, Europe, China, Korea, andTaiwan. Incorporating the technologies used in the AA121XL01, Mitsubishi Electric also intends to expandits lineup of smaller TFT-LCD modules to further meet customer needs. The cost per unit in Japan will be52,500 yen, including consumption tax.Background:In recent years, TFT-LCD modules have been widely used in a variety of applications and environments.Store or warehouse inventory management and factory processing management often relies on POS systemswith information display monitors as well as portable data terminals, which interpret digital pen movements.These applications in particular need TFT-LCD modules that are compact and maintain high brightness toensure high optical performance.Main Product Features:1) 10% smaller size and 20% less thickness helps reduce size and weight of portable data terminals andother display monitors for POS systemsWithout changing the 12.1-inch size of the active area, Mitsubishi Electric has reduced the module size from280.0mm (W) x 210.0mm (H) x 12.0mm (D) to 260.5mm (W) x 203.0mm (H) x 9.7mm (D), which is。TOKYO, December 5, 2017 ? Mitsubishi Electric Corporation (TOKYO: 6503) and the University of Tokyoannounced today that they believe they are the first to quantify the impacts of three electron-scatteringmechanisms for determining the resistance of silicon carbide (SiC) power semiconductor devices in powersemiconductor modules. They have found that resistance under the SiC interface can be reduced by two-thirdsby suppressing electron scattering by the charges, a discovery that is expected to help reduce energyconsumption in power equipment by lowering the resistance of SiC power semiconductors.Going forward, Mitsubishi Electric will continue refinindesignandspecifications of its SiC metal-oxidesemiconductorfield-effect transistor (SiC MOSFET) to further lower the resistance of SiC powersemiconductor devices. This research achievement was initially announced at TheInternational ElectronDevices Meeting (IEDM2017) in San Francisco, California on December 4 (PST).The impact that charges and atomic vibration have on electron scattering under the SiC interface was revealedto be dominant in Mitsubishi Electric’s analyses of fabricated devices. Electron scattering focusing on atomicvibration was measured using technology from the University of Tokyo. Although it has been recognized thatelectron scatting under the SiC interface is limited by three factors, namely, the roughness of the SiC interface,the charges under the SiC interface and the atomic vibration (see Fig. 1), the contribution of each factor hadbeen unclear. A planar-type SiC-MOSFET in which electrons conduct away from the SiC interface to aroundseveral nano meters was fabricated to confirm the impact of the charges. As a result, Mitsubishi Electric andthe University of Tokyo achieved an unprecedented confirmation that the roughness of the SiC interface haslittle effect while charges under the SiC interface and atomic vibration are dominant factors (see Fig. 2). 2/2Compared with a previous planar-type SiC-MOSFET device, resistance was reduced by two thirds owing tosuppression of electron scattering, which was achieved by making the electrons conduct away from the chargesunder the SiC interface. The previous planar-type device used for comparison has the same interface structureas that of the SiC-MOSFET fabricated by Mitsubishi Electric.For the test, Mitsubishi Electric handled the design, fabrication and analysis of the resistance-limiting factorsand the University of Tokyo handled the measurement of electron-scattering factors.BackgroundPower equipment used in home electronics, industrial machinery, trains, etc. requires a combination ofmaximized efficiency and minimized size. Mitsubishi Electric is accelerating use of SiC power semiconductordevices for power semiconductor modules, which are key components in power equipment. SiC power，semiconductor devices offer lower resistance than conventional Si power semiconductor devices, so to furtherlower their resistance it is important to understand the characteristics of the resistance under the SiC interfacecorrectly. Until now, however, it had been difficult to separately measure resistance-limiting。
日前，市委阎立在市行政中心长谊轩亲切会见2013年诺贝尔化学奖得主迈克尔·莱维特(MichaelLevitt)先生一行。迈克尔·莱维特于剑桥大学冈维尔与凯斯学院，是的生物物理学家，1987年至今一直在美国斯坦福大学担任结构生物学教授。2013年，他与另外两位美国科学家马丁·卡普拉斯(MartinKarplus)和亚利耶·瓦谢尔(AriehWarshel)因建立“发展复杂化学体系多尺度模型”而诺贝尔奖，大贡献是引进电脑化学研究，并打通了链接经典物理学与量子物理学的桥梁。迈克尔·莱维特此次来常将在浙江大学常州工业技术研究院建立工作室，并担任纳米研究中心首席科学家。纳米研究中心由浙江大学思源讲座教授周如鸿和科学院院士唐孝威领衔建设，重点关注石墨烯及其衍生物在生物纳米技术上的应用。阎立在会见时表示，常州长期推行科教兴市战略，与国内外大学大院大所广泛开展产学研合作。其中，常州高新区与浙江大学合作，共同成立了浙大常